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IRFD210PBF - HEXFET Power MOSFET

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PD- 95924 IRFD210PbF www.DataSheet4U.com • Lead-Free www.irf.com 1 10/27/04 IRFD210PbF www.DataSheet4U.com 2 www.irf.com IRFD210PbF www.DataSheet4U.com www.irf.com 3 IRFD210PbF www.DataSheet4U.com 4 www.irf.com IRFD210PbF www.DataSheet4U.com www.irf.com 5 IRFD210PbF www.DataSheet4U.com 6 www.irf.com IRFD210PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer www.DataSheet4U.com + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T.