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MRF8S9200NR3 Datasheet, Freescale Semiconductor

MRF8S9200NR3 transistor equivalent, rf power field effect transistor.

MRF8S9200NR3 Avg. rating / M : 1.0 rating-19

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MRF8S9200NR3 Datasheet

Features and benefits


* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Paramete.

Application

with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulati.

Description

Ferrite Beads, Short 39 pF Chip Capacitors 2 pF Chip Capacitor 6.2 pF Chip Capacitor 2.2 μF Chip Capacitor 3.3 pF Chip Capacitors 6.8 pF Chip Capacitors 5.1 pF Chip Capacitors 0.8 pF Chip Capacitors 0.5 pF Chip Capacitors 1.5 pF Chip Capacitor 1.2 pF.

Image gallery

MRF8S9200NR3 Page 1 MRF8S9200NR3 Page 2 MRF8S9200NR3 Page 3

TAGS

MRF8S9200NR3
Power
Field
Effect
Transistor
MRF8S9220HR3
MRF8S9220HSR3
MRF8S9260HR3
Freescale Semiconductor

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