MRF8S9200NR3 RF Power Field Effect Transistor

Freescale Semiconductor

MRF8S9200NR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev.0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode L.
Ferrite Beads, Short 39 pF Chip Capacitors 2 pF Chip Capacitor 6.

MRF8S9200NR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Sour

MRF8S9200NR3 Applications

* with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input

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Datasheet Details

Part number: MRF8S9200NR3
Manufacturer: Freescale Semiconductor
File Size: 328.60 KB
Datasheet: MRF8S9200NR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

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