MRF8S9100HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF8S9100HR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev.0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
Part Number 2743019447 ATC100B470JT500XT ATC100B5R6BT500XT ATC100B7R5BT500XT ATC100B9R1BT500XT T491D106K035AT ATC100B130BT500XT ATC100B2R7BT500XT ATC1.

MRF8S9100HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* RoHS Co

MRF8S9100HR3 Applications

* with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.1 MRF

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Datasheet Details

Part number: MRF8S9100HR3
Manufacturer: Freescale Semiconductor
File Size: 335.08 KB
Datasheet: MRF8S9100HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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