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MRF8S9200NR3 Datasheet, NXP

MRF8S9200NR3 transistor equivalent, rf power field effect transistor.

MRF8S9200NR3 Avg. rating / M : 1.0 rating-12

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MRF8S9200NR3 Datasheet

Features and benefits


* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.

Application

with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulati.

Image gallery

MRF8S9200NR3 Page 1 MRF8S9200NR3 Page 2 MRF8S9200NR3 Page 3

TAGS

MRF8S9200NR3
Power
Field
Effect
Transistor
MRF8S9220HR3
MRF8S9220HSR3
MRF8S9260HR3
NXP

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