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MRF8S9200NR3 NXP

MRF8S9200NR3 RF Power Field Effect Transistor

MRF8S9200NR3 Avg. rating / M : star-16

datasheet Download

MRF8S9200NR3 Datasheet

Features and benefits


• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S.

Application

with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular b.

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MRF8S9200NR3 MRF8S9200NR3 MRF8S9200NR3

TAGS
MRF8S9200NR3
Power
Field
Effect
Transistor
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MRF8S9220HSR3
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NXP
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