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MRF8P9040NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: NXP Semiconductors

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Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 700 to 1000 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Driver Application — 900 MHz • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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