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MRF8S9200NR3 Datasheet RF Power Field Effect Transistor

Manufacturer: NXP Semiconductors

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Overview

Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev.

1, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

📁 Similar Datasheet

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