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MRF101BN Datasheet RF Power LDMOS Transistors

Manufacturer: NXP Semiconductors

Download the MRF101BN datasheet PDF. This datasheet also includes the MRF101AN variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF101AN-NXP.pdf) that lists specifications for multiple related part numbers.

Overview

NXP Semiconductors Technical Data Document Number: MRF101AN Rev.

1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications.

The devices are extremely rugged and exhibit high performance up to 250 MHz.

Key Features

  • Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration.
  • Characterized from 30 to 50 V.
  • Suitable for linear.