MRF8S9260HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF8S9260HR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for CDMA.
Part Number C1, C6, C9, C12, C16 36 pF Chip Capacitors ATC100B360JT500XT C2 0.

MRF8S9260HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Sour

MRF8S9260HR3 Applications

* with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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* . ,8CP4aorMuritHe=rzW,7I5n
* pWCuDattMStsiAgAnPvaeglr. P,foAIQrRmMa=na7cg. en5:itdVuBdDeD@C=0l2ip.80p1iVn%ogl,tPsCr,

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MRF8S9260HR3 Datasheet Preview — Preview of MRF8S9260HR3 PDF

Datasheet Details

Part number: MRF8S9260HR3
Manufacturer: Freescale Semiconductor
File Size: 436.33 KB
Datasheet: MRF8S9260HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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Power Field Effect Transistors Freescale Semiconductor

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