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MRF8S9260HR3 - RF Power Field Effect Transistors

Description

Part Number C1, C6, C9, C12, C16 36 pF Chip Capacitors ATC100B360JT500XT C2 0.4 pF Chip Capacitor ATC100B0R4BT500XT C3 4.7 pF Chip Capacitor ATC100B4R7BT500XT C4, C5 8.2 pF Chip Capacitors ATC100B8R2BT500XT C7 C8, C13, C14, C19, C20 4.7 F, 50 V Chip Capacitor 10 F, 50 V Chip Capacit

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Optimized for Doherty.

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📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S9200NR3 RF Power Field Effect Transistor NXP
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MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S9260HSR3 RF Power Field Effect Transistors
MRF8S9200NR3 RF Power Field Effect Transistor
MRF8S9220HR3 RF Power Field Effect Transistors
MRF8S9220HSR3 RF Power Field Effect Transistors
MRF8S9100HR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.  BITDyaQpni=dcwa1li7dS0tihn0g=mle3A--.,8CP4aorMuritHe=rzW,7I5n--pWCuDattMStsiAgAnPvaeglr.P,foAIQrRmMa=na7cg.en5:itdVuBdDeD@C=0l2ip.80p1iVn%ogl,tPsCr,ohbaanbnielitly on CCDF. Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 920 MHz 18.8 36.0 6.3 --39.5 940 MHz 18.7 37.0 6.2 --38.6 960 MHz 18.6 38.5 5.9 --37.
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