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MRF6S20010GNR1 Datasheet, Freescale Semiconductor

MRF6S20010GNR1 transistors equivalent, rf power field effect transistors.

MRF6S20010GNR1 Avg. rating / M : 1.0 rating-12

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MRF6S20010GNR1 Datasheet

Features and benefits


* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operatio.

Application

with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applicatio.

Description

100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104.

Image gallery

MRF6S20010GNR1 Page 1 MRF6S20010GNR1 Page 2 MRF6S20010GNR1 Page 3

TAGS

MRF6S20010GNR1
Power
Field
Effect
Transistors
Freescale Semiconductor

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