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MRF6S21050LSR3 - RF Power Field Effect Transistors

Download the MRF6S21050LSR3 datasheet PDF. This datasheet also covers the MRF6S21050LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor 220 µF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resi

Key Features

  • dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W.
  • CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3.
  • 25.
  • 30 RF Device Data Freescale Semiconductor DataSheet 4 U . com www. DataSheet4U. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S21050LR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S21140HR3 RF Power FET NXP
MRF6S21140HSR3 RF Power FET NXP
MRF6S9060MBR1 RF Power Field Effect Transistors NXP
MRF6S9060MR1 RF Power Field Effect Transistors NXP
MRF6S9060NBR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S21050LR3 RF Power Field Effect Transistors
MRF6S21060NBR1 RF Power Field Effect Transistors
MRF6S21060NR1 RF Power Field Effect Transistors
MRF6S21100HR3 RF Power Field Effect Transistors
MRF6S21100HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc @ 3.