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MRF6S21050LR3 - RF Power Field Effect Transistors

General Description

Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor 220 µF, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resi

Key Features

  • dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W.
  • CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3.
  • 25.
  • 30 RF Device Data Freescale Semiconductor DataSheet 4 U . com www. DataSheet4U. com.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc @ 3.