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MRF6S21060NBR1 - RF Power Field Effect Transistors

General Description

Part Number C1 100 nF Chip Capacitor CDR33BX104AKYS C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT C4, C5, C6, C10, C11 10 μF, 35 V Chip Capacitors GRM55DR61H106KA88L R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA R2 10 kΩ, 1/4 W

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S21060NR1 RF Power Field Effect Transistors
MRF6S21050LR3 RF Power Field Effect Transistors
MRF6S21050LSR3 RF Power Field Effect Transistors
MRF6S21100HR3 RF Power Field Effect Transistors
MRF6S21100HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and TD--SCDMA applications. • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — --40 dBc in 3.