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MRF6S19100NR1 - RF Power Transistors

Download the MRF6S19100NR1 datasheet PDF. This datasheet also covers the MRF6S19100NBR1 variant, as both devices belong to the same rf power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF6S19100NBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • N Suffix Indicates Lead - Free Terminations.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S19100NBR1 RF Power Field Effect Transistors
MRF6S19100HR3 RF Power Field Effect Transistors
MRF6S19100HSR3 RF Power Field Effect Transistors
MRF6S19120HR3 RF Power Transistors
MRF6S19120HSR3 RF Power Transistors
MRF6S19140HR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19060NBR1 RF Power Field Effect Transistors
MRF6S19060NR1 RF Power Field Effect Transistors
MRF6S19200HR3 RF Power Transistors