Datasheet Details
| Part number | FPD7612P70 |
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| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 222.17 KB |
| Description | HI-FREQUENCY PACKAGED PHEMT |
| Datasheet |
 FPD7612P70 Datasheet
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General Description
AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography.
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