Datasheet Details
| Part number | FPD750 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 244.24 KB |
| Description | 0.5W POWER PHEMT |
| Datasheet |
 FPD750 Datasheet
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General Description
The www.DataSheet4U.com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
Key Features
- 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency Datasheet v3.0 LAYOUT:.