| Part number | FPD750 |
|---|---|
| Download | FPD750 Datasheet (PDF) |
| File Size | 244.24 KB |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | 0.5W POWER PHEMT |
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| Part Number | Description |
|---|---|
| FPD750DFN | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750P100 | 0.5W PACKAGED POWER PHEMT |
| FPD750SOT343 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD750SOT89 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| FPD7612 | GENERAL PURPOSE PHEMT |
FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
