FPD750 phemt equivalent, 0.5w power phemt.
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* 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Eff.
The FPD750 also features Si3N4 passivation and is available in the low cost plastic SOT89 SOT343 and DFN packages.
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The www.DataSheet4U.com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate struc.
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