FDS9936A transistor equivalent, dual n-channel enhancement mode field effect transistor.
5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capabili.
such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance .
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