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FDS9933 - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Features

  • 5 A,.
  • 20 V, RDS(ON) = 55 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 90 mΩ @ VGS =.
  • 2.5 V.
  • Extended VGSS range (±12V) for battery.

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FDS9933 January 2004 FDS9933 Dual P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V RDS(ON) = 90 mΩ @ VGS = –2.
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