FDS9933A
Description
These P- Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- - 3.8 A,
- 20 V. RDS(on) = 0.075 W, VGS =
- 4.5 V
RDS(on) = 0.105 W, VGS =
- 2.5 V
- Low Gate Charge (7 n C Typical )
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb- Free and Halide Free
Applications
- Load Switch
- DC/DC Converters
- Motor Drives
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS Drain- Source Voltage
- 20
VGSS Gate- Source Voltage
8
Drain Current Continuous (Note 1a)
- 3.8
Pulsed
- 20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note...
