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FDS9926A - Dual N-Channel MOSFET

Description

These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process.

10V).

Battery protection Load switch Power man

Features

  • 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V.
  • Optimized for use in battery protection circuits.
  • Low gate charge 5 4 6 Q1 3 7 2 Q2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) T.

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FDS9926A July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Applications • Battery protection • Load switch • Power management Features 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 43 mΩ @ VGS = 2.5 V.
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