Datasheet4U Logo Datasheet4U.com

FDS9933A - Dual P-Channel MOSFET

Description

These P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 3.8 A,.
  • 20 V. RDS(on) = 0.075 W, VGS =.
  • 4.5 V RDS(on) = 0.105 W, VGS =.
  • 2.5 V.
  • Low Gate Charge (7 nC Typical ).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • This Device is Pb.
  • Free and Halide Free.

📥 Download Datasheet

Datasheet Details

Part number FDS9933A
Manufacturer onsemi
File Size 274.60 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS9933A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
FDS9934C MOSFET Fairchild Semiconductor
FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS4435A P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Dual, P-Channel, POWERTRENCH) 2.5 V Specified FDS9933A General Description These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features  −3.8 A, −20 V. RDS(on) = 0.075 W, VGS = −4.5 V RDS(on) = 0.105 W, VGS = −2.
Published: |