FDS8882 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
* High performance trench technology fo.

Application

* Notebook System Regulators
* DC/DC Converters D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET.

Description

* Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
* High performance trench technology for extremely low rDS(on) and fast switching
* High power and current handling capability
* Ter.

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