FDS8884 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDS8884
Manufacturer	ON Semiconductor
File Size	406.67 KB
Description	N-Channel MOSFET
Datasheet	FDS8884 Datasheet
Additional preview pages of the FDS8884 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A.
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A.
Low gate charge.
100% RG Tested.
RoHS Compliant D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current Continuous ID Pulsed (Note 1a) EAS Single Pulse Avalanche Energy Power dissipation PD Derate above 25oC (Note 2.

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Published: Dec 25, 2023 |