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FDS8884 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

  • Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A.
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A.
  • Low gate charge.
  • 100% RG Tested.
  • RoHS Compliant D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current Continuous ID Pulsed (Note 1a) EAS Single Pulse Avalanche Energy Power dissipation PD Derate above 25oC (Note 2.

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Datasheet Details

Part number FDS8884
Manufacturer ON Semiconductor
File Size 406.67 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8884 Datasheet
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Full PDF Text Transcription

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FDS8884 N-Channel PowerTrench® MOSFET MPLEMENTATION FDS8884 N-Channel PowerTrench® MOSFET LE 30V, 8.5A, 23mΩ General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. AD FREE I Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.
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