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FDS8884 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A.
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A.
  • Low gate charge.
  • 100% RG Tested.
  • RoHS Compliant M.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8884 N-Channel PowerTrench® MOSFET February 2006 FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. A REE I DF Features „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A „ Low gate charge „ 100% RG Tested „ RoHS Compliant M ENTATIO LE N MP LE D D D D www.DataSheet4U.