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FDS8817NZ - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Key Features

  • PowerTrench® tm MOSFET General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8817NZ N-Channel PowerTrench® MOSFET March 2007 FDS8817NZ N-Channel 30V, 15A, 7.0mΩ Features PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A „ HBM ESD protection level of 3.8kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D G S S Pin 1 S D S www.DataSheet4U.