Datasheet Details
| Part number | FDS8842NZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 316.27 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS8842NZ Datasheet
|
|
|
| Part number | FDS8842NZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 316.27 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDS8842NZ Datasheet
|
|
|
|
Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant The FDS8842NZ has been designed to minimize losses in power conversion application.Advancements in both silicon and packa
📁 Similar Datasheet