FDS8638 mosfet equivalent, n-channel mosfet.
General Description
March 2009
* Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
* High performance trench t.
* Synchronous Rectifier
* Load Switch
D D D D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum .
March 2009
* Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL Tested
* RoHS Compliant
This N-Channel MOSFET.
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