FDS6575
Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V - 8V).
Key Features
- -10 A, -20 V. RDS(ON) = 13 mΩ @ VGS = -4.5 V RDS(ON) = 17 mΩ @ VGS = -2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability
