FDS6575 Key Features
- 10 A, -20 V. RDS(ON) = 13 mΩ @ VGS = -4.5 V RDS(ON) = 17 mΩ @ VGS = -2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
FDS6575 | P-Channel 20V MOSFET |