FDS6575 Datasheet | Fairchild Semiconductor

Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V - 8V). Applications - Power management - Load switch - Battery protection Features - - 10 A, - 20 V. RDS(ON) = 13 mΩ @ VGS = - 4.5 V RDS(ON) = 17 mΩ @ VGS = - 2.5 V - Low gate charge - High performance trench technology for extremely low RDS(ON) - High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case...