FDS6570A
Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V.
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Low gate charge (47n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
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- DC/DC converter Load switch Battery protection
5 6 4 3 2 1
SO-8
7 8
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
(Note 1a)
Units
±8 15 50 2.5 1.2 1 -55 to +150
Power...
