FDS6572A
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 2.5 V
- Low gate charge (57 n C)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
5 6 4 3 2 1
SO-8
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25 C unless otherwise noted o
Parameter
Ratings
20 ±12
(Note 1a)
Units
16 80 2.5 1.2 1.0
- 55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance,...
