FDS6570A
Description
This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
- 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V
RDS(on) = 0.010 Ω @ VGS = 2.5 V.
- Low gate charge (47n C typical).
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Applications
- DC/DC converter
- Load switch
- Battery protection
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability.
G SS SO-8 S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note...
