FDP8N50NZU datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A
* Low Gate Charge ( Typ. 14nC)
* Low Crss ( Typ. 5pF)
* Fast Switching
* 100% Avalanche Tested
* .

Description

This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology. This advance t echnology ha s been especially t ailored to minimize on-st ate r esistance, provide super io.

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