FDP8N50NZF datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
* Low Gate Charge ( Typ. 14nC)
* Low Crss ( Typ. 5pF)
* Fast Switching
* 100% Avalanche Tested
*.

Description

This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchin.

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