FDMS3602AS datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

Q1: N-Channel
* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel
* Max rDS(on) = 2.2 mΩ at VGS = 1.

Application

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 G.

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) hav.

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