Datasheet4U Logo Datasheet4U.com

FDMS3602AS - MOSFET

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A.
  • Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel.
  • Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A.
  • Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant March 2011.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS3602S 25V Asymmetric Dual N-Channel MOSFET ON Semiconductor
FDMS3604S N-Channel MOSFET ON Semiconductor
FDMS3606AS Asymmetric Dual N-Channel MOSFET ON Semiconductor
FDMS3660S Asymmetric Dual N-Channel MOSFET ON Semiconductor
FDMS3662 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDMS3602S MOSFET
FDMS3600AS MOSFET
FDMS3600S MOSFET
FDMS3604AS MOSFET
FDMS3604S MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS3602AS PowerTrench® Power Stage FDMS3602AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant March 2011 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.