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FDMC6296 N-Channel Power Trench® MOSFET
FDMC6296
Single N-Channel Logic-Level Power Trench® MOSFET
30 V, 11.5 A, 10.5 mΩ
Features
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A Low Qg, Qgd and Rg for efficient switching performance RoHS Compliant
November 2010
General Description
This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a “high side” control swtich or “low side” synchronous rectifier.
FDMC6296 Datasheet
