FDMC6296 mosfet equivalent, single n-channel logic-level power trench mosfet.
* Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A
* Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A
* Low Qg, Qgd and Rg for efficient switching performance
This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as.
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