FDMC510P mosfet equivalent, mosfet.
* Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
* Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
* Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
*.
* Battery Management
* Load Switch
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Pin 1
S SG S
DD D D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
* Battery Management
* Load Switch
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Pin 1
S .
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