FDMA8884 mosfet equivalent, single n-channel powertrench mosfet.
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on.
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application
* Primary Switch
Pin 1
D
D
G D
Bottom Drain Contact
D D S
Drain
Sourc.
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