FDMA8878 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
* Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
* High performance trench technology for extremely low rDS(on.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. Application
* DC/DC Buck Converters
* Load Switch in NB
* Notebook Battery Power.

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