FDD8876 - N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDD8876 Datasheet Preview — Preview of FDD8876 PDF

Datasheet Details

Part number	FDD8876
Manufacturer	Fairchild ↗ Semiconductor
File Size	439.52 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDD8876_FairchildSemiconductor.pdf

FDD8876 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters

Features

rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A.
rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A.
High performance trench technology for extremely low rDS(ON).
Low gate charge.
High power and current handling capability.
RoHS Compliant D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC,.

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Published: Mar 30, 2005 |