FDD8426H mosfet equivalent, dual p and n-channel mosfet.
Q1: N-Channel
* Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel
* Max rDS(on) = 17 mΩ at VGS = -10 .
* Inverter
* H-Bridge
D1 D1/D2
D2
G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel
G2
S2 P-Channel
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These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
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