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FDD8424H_F085A - Dual N & P-Channel PowerTrench MOSFET

Datasheet Summary

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Inverter H-Bridge D1

Features

  • Q1: N-Channel.
  • Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A.
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel.
  • Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A.
  • Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A.
  • Fast switching speed.
  • Qualified to AEC Q101.
  • RoHS Compliant General.

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Datasheet Details

Part number FDD8424H_F085A
Manufacturer Fairchild Semiconductor
File Size 490.14 KB
Description Dual N & P-Channel PowerTrench MOSFET
Datasheet download datasheet FDD8424H_F085A Datasheet
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Full PDF Text Transcription

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FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Jan 2013 tm Features Q1: N-Channel „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel „ Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A „ Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A „ Fast switching speed „ Qualified to AEC Q101 „ RoHS Compliant General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
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