FDD8424H Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application Inverter H-Bridge D1 D2 D1/D2.
FDD8424H Key Features
- Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
- Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel
- Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A
- Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A
- Fast switching speed
- RoHS pliant
- Inverter
- H-Bridge
- Continuous (Package Limited)
- Continuous (Silicon Limited)