FDD8424H Datasheet | Fairchild Semiconductor

FDD8424H Dual N & P-Channel Power Trench® MOSFET March 2007 Dual N & P-Channel Power Trench® MOSFET Features Q1: N-Channel - Max r DS(on) = 24mΩ at VGS = 10V, ID = 9.0A - Max r DS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel - Max r DS(on) = 54mΩ at VGS = -10V, ID = -6.5A - Max r DS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A - Fast switching speed - Ro HS pliant tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application - Inverter - H-Bridge D1 D2 D1/D2 .. G1 G2 S2 G1 S1 S1 Dual DPAK 4L N-Channel G2 S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID - Continuous (Package Limited) - Continuous (Silicon Limited) - Continuous - Pulsed Power Dissipation for Single Operation PD EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25°C (Note 1) TA = 25°C (Note 1a) TA = 25°C (Note 1b) (Note 3) 29 TC = 25°C TA = 25°C Q1 40 ±20 20 26 9.0 55 30 3.1 1.3 33 m J °C -55 to +150 Q2 -40 ±20 -20 -20 -6.5 -40 35 W A Units V...