FDD8445 Datasheet | Fairchild Semiconductor

Features - RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A - Qg(10) = 45n C (Typ), VGS=10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse/ Repetitive Pulse) - Ro HS pliant Applications - Powertrain Management - Electronic Transmission - Distributed Power Architecture and VRMs - Primary Switch for 12V Systems - D ©2007 Fairchild Semiconductor Corporation FDD8445 Rev. 1.3 .fairchildsemi. FDD8445 N-Channel Power Trench® MOSFET Absolute Maximum Ratings Tc = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS=10v) (Note 1) Continuous (VGS=10v,with RJA = 52o C/W) Pulsed Single Pulse Avalanche Energy (Note2) Power Dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Ratings 40 ±20 70 15.2 Figure 4 144 79 0.53 -55 to +175 Units V V A A m J W W/o C o C Thermal Characteristics RJC Thermal Resistance, Junction to...