FDB5800 mosfet equivalent, n-channel mosfet.
* RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A
* High Performance Trench Technology for Extermly
Low RDS(on)
* Low Gate Charge
* High Power and Current .
* Power tools
* Motor drives and Uninterruptible Power Supplies
D D
G S
D2-PAK
G S
Absolute Maximum Ratings.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Power tools
* Motor dr.
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