FDB024N04AL7 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on) <.

Application

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and U.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification.

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