FDB016N04AL7 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on).

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. A
* pplications
* Synchronous Rectifica.

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