Datasheet4U Logo Datasheet4U.com

FDB5645 - 60V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Sym.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDB035AN06A0 N-Channel MOSFET INCHANGE
FDB035AN06A0 N-Channel MOSFET ON Semiconductor
FDB035N10A N-Channel MOSFET ON Semiconductor
FDB045AN08A0 N-Channel MOSFET ON Semiconductor
FDB045AN08A0-F085 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDB5680 60V N-Channel MOSFET
FDB5686 60V N-Channel MOSFET
FDB5690 60V N-Channel MOSFET
FDB52N20 MOSFET
FDB5800 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at elevated temperature.