2N7000BU mosfet equivalent, advanced small signal mosfet.
* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High-Temperature Reliabilit.
requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-volt.
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. The.
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