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2N7000BU - Advanced Small Signal MOSFET

General Description

These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products minimize onstate resistance while providing rugged, reliable, and fast switching performance.

Key Features

  • Fast Switching Times.
  • Improved Inductive Ruggedness.
  • Lower Input Capacitance.
  • Extended Safe Operating Area.
  • Improved High-Temperature Reliability.

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Other Datasheets by Fairchild (onsemi)

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2N7000 N-Channel Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times • Improved Inductive Ruggedness • Lower Input Capacitance • Extended Safe Operating Area • Improved High-Temperature Reliability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A.