* VDS =30V,ID =110A RDS(ON) <3.6mΩ @ VGS=10V (Typ: 2.7mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche .

General Features
* VDS =30V,ID =110A RDS(ON) <3.6mΩ @ VGS=10V (Typ: 2.7mΩ) Schematic diagram
* High density.

The FNK11N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =110A RDS(ON) <3.6mΩ @ VGS=10V (Typ: 2.7mΩ) Schematic .

FNK10N01

FNK10N01-A

FNK10N02

FNK10N02-A

FNK10N02C

FNK10N03

FNK10N25A

FNK10N25B

FNK10N25E

FNK10N25S

FNK10N25SC

FNK10N25V

FNK10P170K

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