FNK10N25SC mosfet equivalent, n-channel power mosfet.
* VDS = 18V,Id = 8A RDS(ON) <18mΩ @ VGS=2.5V RDS(ON) < 14m Ω @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
* Surf.
The FNK10N25S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
G
D
D G
Ge.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 0.96MB)