FNK06P20E Datasheet, FNK

* VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.

FNK06P20E General Features
* VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V
* High density cell design for ultra .

The FNK06P20E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. FNK06P20E General Features
* VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V <.